Iron Doping in Hydride Vapor Phase Epitaxy of GaN
نویسندگان
چکیده
In order to overcome problems with non-uniform iron (Fe) doping in our GaN layers grown by hydride vapor phase epitaxy, we have optimized the construction of our ferrocene doping channel. By pre-heating the hydrogen carrier gas before entering the hot bubbler, a constant Fe supply could be established. Moreover, losses of the precursor gas in the reactor could be minimized by a re-design of the ferrocene mini-showerhead. In consequence, an about 1mm thick free-standing GaN layer containing a uniform Fe concentration of 2 · 10 cm exhibited a specific resistivity of 10Ωcm at room temperature.
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